Atoms package

The QTCAD atoms package is used to model the electronic properties of quantum dots using the atomistic Keating valence force-field and tight-binding models. When used in combination with finite-element methods, this enables multiscale simulations of quantum devices. In the first tutorial in this section, we perform finite-element simulations of a quantum dot in a Si/SiGe heterostructure. In the second tutorial, we leverage the results of the first tutorial to compute the electronic structure of the quantum dot using the atomistic tight-binding model and study its valley properties. In the third tutorial, we build on the valley properties of the quantum dot obtained in the second tutorial to study features of the quantum dot that are useful for quantum control applications. Finally, in the fourth tutorial, we compute the \(g\)-tensor of a quantum dot in a fully-depleted silicon-on-insulator (FD-SOI) structure using the atomistic tight-binding model.

• 1. Multiscale simulations of a SiGe–Si–SiGe quantum dot—Part 1: Finite-element method for device electrostatics
• 2. Multiscale simulations of a SiGe–Si–SiGe quantum dot—Part 2: Tight-binding model for valley splitting
• 3. Multiscale simulations of a SiGe–Si–SiGe quantum dot—Part 3: Quantum control
• 4. Computing \(g\)-tensors in an FD-SOI device