Tutorials

In this page, you will learn how to use the four main packages of QTCAD, qtcad.device, qtcad.transport, qtcad.qubit, and qtcad.atoms, through a series of tutorials.

• Device package
  • 1. Poisson and Schrödinger simulation of a nanowire quantum dot
  • 2. Poisson solver with adaptive meshing
  • 3. Poisson solver with background charges
  • 4. Adaptive-mesh Poisson solver combined with the Schrödinger solver
  • 5. Schrödinger equation for a quantum dot
  • 6. Band alignment in heterostructures
  • 7. Visualizing QTCAD quantities with ParaView
  • 8. Self-consistent Schrödinger–Poisson simulation of a MOS capacitor
  • 9. Schrödinger simulation of a quantum well
  • 10. Including spin–orbit coupling and magnetic effects in a simulation
  • 11. Including strain in a simulation
  • 12. Valley splitting (MVEMT)
  • 13. MVEMT applied to a donor in silicon
  • 14. Many-body analysis of a nanowire quantum dot
  • 15. A double quantum dot device in a fully-depleted silicon-on-insulator transistor
  • 16. Tunnel coupling in a double quantum dot in FD-SOI—Part 1: Plunger gate tuning
  • 17. Tunnel coupling in a double quantum dot in FD-SOI—Part 2: Tuning the barrier gate
  • 18. Exchange coupling in a double quantum dot in FD-SOI—Part 1: Perturbation theory
  • 19. Exchange coupling in a double quantum dot in FD-SOI—Part 2: Exact diagonalization
  • 20. Point charges in a double quantum dot in FD-SOI
  • 21. Periodic boundary condition in a quantum dot in FD-SOI
• Transport package
  • 1. Quantum transport—Master equation
  • 2. Quantum transport—WKB approximation
  • 3. Quantum transport—Charge stability diagram of a double quantum dot
  • 4. NEGF–Poisson simulations of an FD-SOI field-effect transistor with a quantum dot
  • 5. Poisson–NEGF–Master-equation simulations of an FD-SOI field-effect transistor with a single quantum dot
• Qubit package
  • 1. Electric dipole spin resonance—Dynamics
  • 2. Electric dipole spin resonance—Noise
• Atoms package
  • 1. Multiscale simulations of a SiGe–Si–SiGe quantum dot—Part 1: Finite-element method for device electrostatics
  • 2. Multiscale simulations of a SiGe–Si–SiGe quantum dot—Part 2: Tight-binding model for valley splitting
  • 3. Multiscale simulations of a SiGe–Si–SiGe quantum dot—Part 3: Quantum control
  • 4. Computing \(g\)-tensors in an FD-SOI device